msd100 msd100-rev 1 www.microsemi.com dec, 2009 1/3 module type type v rrm v rsm msd100 ? 08 msd100 ? 12 msd100 ? 16 msd100 ? 18 800v 1200v 1600v 1800v 900v 1300v 1700v 1900v maximum ratings symbol conditions values units id tc=100 100 a ifsm t=10ms tv j =45 920 a i 2 t t=10ms tv j =45 4200 a 2 s visol a.c.50hz;r.m.s.;1min 3000 v tvj -40 to 150 tstg -40 to 125 mt to terminals(m6) 515% nm ms to heatsink(m6) 515% nm weight module 230 g thermal characteristics symbol conditions values units rth (j -c ) per diode 0.9 / w rth ( c-s ) module 0.03 / w electrical characteristics circuit glass passivated three phase rectifier bridge v rrm 800 to 1800v i d 100 amp features y three phase bridge rectifier y blocking voltage: 800 to 1800v y heat transfer through aluminum oxide dcb ceramic isolated metal baseplate y glass passivated chip applications y three phase rectifiers for power supplies y rectifiers for dc motor field supplies y battery charger rectifiers y in p ut rectifiers for variable fre q uenc y drives - + ~ ~ ~ msd symbol conditions values units vfm t=25 ifm =300 a 1.9 v ird tvj =25 vrd=vrrm tvj =150 vrd=vrrm 0.3 5 ma ma
msd100 msd100-rev 1 www.microsemi.com dec, 2009 2/3 performance curves fig1. forward characteristics fig3. transient thermal impedance fi g 2. power dissi p ation fig4. max non-repetitive forward surge current fig5.forward current derating curve z th(j- c ) typ. 25 125 0 vf 0.5 1.0 1.5 2.0 v 0.001 0.01 0.1 1 10 100 s 1 10 cycles 100 1000 500 0 1500 a 0 tc 50 100 150c 200 a 160 120 0 80 40 i d 50hz 1.0 / w 0 0.5 300 a 150 if 0 w 0 250 125 p vtot 0 i d 50 100 a
msd100 msd100-rev 1 www.microsemi.com dec, 2009 3/3 package outline information case-m3 dimensions in mm
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